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| DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 25 V (Min) hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA 1 B 2 C 3 E 0.175 - 0.185 (4.450 - 4.700) LOGOXYY 1 2 3 0.135 - 0.145 (3.429 - 3.683) ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C VOLTAGES & CURRENT VCEO Collector to Emitter VCBO Collector to Base VEBO Emitter to Base IC Collector Current 150 Degrees C 150 Degrees C 2N 6076 0.175 - 0.185 (4.450 - 4.700) SEATING 625 mW 0.500 (12.70) PLANE MIN 25 V 25 V 5V 500 mA 0.016 - 0.021 (0.410- 0.533) 0.045 - 0.055 (1.143- 1.397) 0.095 - 0.105 (2.413 - 2.667) ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM BVCBO BVCEO BVEBO ICBO ICES IEBO hFE VCE(sat) VBE(sat) VBE(on) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base -Emitter On Voltage MIN MAX 25 25 5 100 10 100 100 100 500 0.25 0.8 0.5 1.2 UNITS V V V nA uA nA uA V V V TEST CONDITIONS IC = IC = IE = 100 uA 10 mA 10 uA VCB = 25 V VCB = 25 V , T=+100C VCE = 25 V VEB = 3.0 V VCE = 10 V IC = 10 mA IC = 10mA IB = 1.0mA IC = 10mA IB = 1.0mA VCE = 10 V IC = 10mA (c)1998 Fairchild Semiconductor Corporation 2N6076.ppt6894 revA DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR ELECTRICAL CHARACTERISTICS Con't (25 Degrees C Ambient Temperature unless otherwise stated) SYM Ccb hfe CHARACTERISTICS Output Capacitance Small Signal Current Gain MIN MAX UNITS 1 100 13 750 pF TEST CONDITIONS VCB = 10 V, f = 1 MHz VCE = 10 V, IC=10 mA, f =1KHz NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150 degrees C. |
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